Rb₄Sn₄I₁₂ is a halide perovskite semiconductor composed of rubidium, tin, and iodine—a member of the lead-free perovskite family actively investigated for optoelectronic applications. This material is primarily of research interest rather than established industrial production, with potential applications in photovoltaics, light emission, and radiation detection where non-toxic alternatives to lead-based perovskites are increasingly demanded. The tin-based composition addresses toxicity and environmental concerns associated with lead perovskites, though stability and performance optimization remain active areas of development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.054 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9890 | eV/atom | — |