Rb₄Sb₈S₁₄ is a mixed-metal chalcogenide semiconductor compound containing rubidium, antimony, and sulfur. This is a research-phase material studied for its potential in thermoelectric and solid-state electronic applications, with interest driven by its layered crystal structure and tunable band gap characteristics typical of the Rb-Sb-S compound family.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21.33 | GPa | — | ||
Shear Modulus(G) | 12.04 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.366 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6360 | eV/atom | — |