Rb3Tc1 is an experimental intermetallic semiconductor compound combining rubidium and technetium in a 3:1 stoichiometric ratio. This material belongs to the class of intermetallic semiconductors and exists primarily in research contexts, with potential applications in advanced electronics where the combination of alkali metal and transition metal properties might enable unique band structure characteristics. As a technetium-containing compound, practical deployment faces significant constraints due to technetium's radioactivity and scarcity, limiting real-world industrial adoption to specialized research environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4.600 | GPa | — | ||
Shear Modulus(G) | 1.580 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01200 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.194 | eV/atom | — |