Rb3Bi1 is an intermetallic semiconductor compound composed of rubidium and bismuth, belonging to the family of alkali metal bismuthides. This material is primarily of research and theoretical interest rather than established in industrial production, with potential applications in novel semiconductor devices, thermoelectric systems, and quantum materials research where the unique electronic structure of bismuth combined with alkali metal chemistry may offer distinct band-gap or transport properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11.87 | GPa | — | ||
Shear Modulus(G) | 8.020 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7055 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4280 | eV/atom | — |