Rb2VAgS4 is a quaternary chalcogenide semiconductor compound combining rubidium, vanadium, silver, and sulfur. This is a research-phase material within the broader family of multinary sulfide semiconductors, of interest for its potential optoelectronic and photovoltaic properties arising from its mixed-metal composition. While not yet in mainstream industrial production, compounds in this material class are being investigated for next-generation thin-film photovoltaics, nonlinear optical devices, and solid-state electronics where conventional binary or ternary semiconductors show limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.424 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.830 | eV | Measured | ||
| ↳ | 1.379 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 6.191 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.069 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data