Rb2TeI6
semiconductorRb₂TeI₆ is a halide perovskite semiconductor compound composed of rubidium, tellurium, and iodine, belonging to the emerging class of metal halide materials under active research for next-generation optoelectronic devices. This material is primarily investigated in academic and early-stage industrial research contexts for photovoltaic and light-emission applications, where its bandgap and electronic structure offer potential advantages in visible and near-infrared light conversion. Compared to established semiconductors like silicon or traditional perovskites, Rb₂TeI₆ represents a lower-toxicity alternative to lead-based systems and exhibits tunable optical properties, though it remains largely in the development phase with limited commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14.29 | GPa | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 6.710 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.547 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.400 | eV | — | ||
| ↳ | 1.424 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -210.9 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8178 | eV/atom | — |