Rb2Mo3Se3O16

semiconductor
· Rb2Mo3Se3O16

Rb₂Mo₃Se₃O₁₆ is a mixed-metal oxide semiconductor containing rubidium, molybdenum, selenium, and oxygen in a complex layered structure. This is a research compound studied for its potential in solid-state electronics and photocatalytic applications, belonging to the broader family of polyoxometalates and mixed-valence transition metal oxides that show promise for next-generation optoelectronic devices. The material's layered architecture and semiconductor behavior make it relevant to emerging fields where conventional semiconductors face limitations, though industrial-scale applications remain largely exploratory.

photocatalytic materials researchsolid-state electronics developmentlayered semiconductor structuresexperimental optoelectronicspolyoxometalate applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
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