Rb₂Bi₂F₆ is a halide perovskite semiconductor compound combining rubidium, bismuth, and fluorine elements. This material belongs to the lead-free halide perovskite family, an emerging class of semiconductors under active research for optoelectronic applications as a safer alternative to lead-based perovskites. While primarily in the research phase, Rb₂Bi₂F₆ is investigated for its potential in photovoltaics, light-emission devices, and radiation detection due to its wide bandgap and stability characteristics inherent to bismuth-based halide perovskites.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 42.24 | GPa | — | ||
Shear Modulus(G) | 17.81 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.686 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.507 | eV/atom | — |