Rb12Tl4O12 is an experimental mixed-metal oxide semiconductor compound containing rubidium and thallium in a structured lattice. This material belongs to the family of complex metal oxides and has been studied primarily in solid-state physics and materials research contexts rather than established industrial production. While not yet widely deployed in commercial applications, compounds of this chemical family are of interest for their potential in advanced semiconductor devices, ion-conducting ceramics, and solid-state electronic components where mixed-valence metal oxides can enable novel electronic properties.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 33.81 | GPa | — | ||
Shear Modulus(G) | 10.95 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.582 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.259 | eV/atom | — |