Rb12 Br8 O2
semiconductorRb₁₂Br₈O₂ is an experimental mixed-halide oxide semiconductor compound containing rubidium, bromine, and oxygen in a complex stoichiometric ratio. This material belongs to the family of halide perovskite and perovskite-related semiconductors, which are primarily of research interest for optoelectronic and photovoltaic applications. While not yet widely deployed in commercial products, halide-based semiconductors in this compositional space are investigated for thin-film solar cells, photodetectors, and light-emitting devices, valued for their tunable bandgap and solution-processability compared to conventional silicon; however, stability and toxicity concerns remain key challenges driving continued material development in this family.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |