Rb₁₂Bi₄Se₁₂ is a ternary chalcogenide semiconductor compound combining rubidium, bismuth, and selenium in a layered crystal structure. This material is primarily of research interest for thermoelectric and optoelectronic applications, where the combination of heavy elements (Bi, Se) and alkali metal (Rb) promotes low thermal conductivity and tunable electronic properties characteristic of emerging semiconductor families.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.001 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.029 | eV/atom | — |