Rb1U2Sb1S8 is a ternary semiconductor compound combining rubidium, uranium, antimony, and sulfur in a layered chalcogenide structure. This is an experimental material studied primarily in solid-state physics and materials research rather than established industrial production; compounds in this family are investigated for potential optoelectronic and radiation-detection properties due to the presence of uranium and the semiconducting character of the antimony-sulfur framework.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00320 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.060 | eV/atom | — |