Rb1N1O3 is a rare-earth oxide semiconductor compound combining rubidium and nitrogen in an oxidic structure, representing an emerging class of functional ceramics under active research. This material belongs to the family of mixed-valence metal oxides with potential applications in solid-state electronics and photocatalysis, though it remains largely in the development stage with limited commercial deployment. Engineers would consider this compound for next-generation optoelectronic devices or catalytic systems where its unique electronic structure and chemical stability offer advantages over conventional semiconductors, though availability and processing maturity are currently limiting factors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19.93 | GPa | — | ||
Shear Modulus(G) | 4.860 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.018 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.011 | eV/atom | — |