Rb1 In1 O3

semiconductor

· Rb1 In1 O3

Rb1In1O3 is an inorganic oxide semiconductor compound containing rubidium and indium. This material belongs to the family of mixed-metal oxides and is primarily of research interest rather than established industrial use, with potential applications in optoelectronics, photocatalysis, and solid-state devices where its bandgap and electronic properties may be relevant. Engineers evaluating this compound should recognize it as an experimental or emerging material whose performance characteristics differ from more mature semiconductors like indium oxide or gallium arsenide, making it suitable for specialized research applications rather than high-volume production.

research semiconductorsphotocatalytic materialsoptoelectronic devicessolid-state electronicsmetal oxide compoundsemerging materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	76.73	GPa	—
Shear Modulus(G)	33.26	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.654	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.033	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Rb1 In1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control