Rb1 Hg1 N3 O6

semiconductor

· Rb1 Hg1 N3 O6

Rb1Hg1N3O6 is an inorganic compound combining rubidium, mercury, nitrogen, and oxygen—a rare hybrid material that bridges ionic and coordination chemistry. This is primarily a research-phase compound studied for potential semiconductor and functional material applications, rather than an established industrial material; it belongs to the family of mixed-metal nitrate/oxide systems being investigated for novel electronic, photonic, or catalytic properties.

research semiconductorsfunctional materials developmentcoordination chemistry studiesexperimental electronic devicesmaterials discovery screening

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6637	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3210	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Rb1 Hg1 N3 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control