RbBiO₃ is a mixed-metal oxide semiconductor composed of rubidium and bismuth, belonging to the class of perovskite-related compounds. This material is primarily of research interest rather than established in high-volume industrial production, investigated for its potential in photocatalysis, optoelectronic devices, and solid-state physics applications where bismuth-containing oxides offer unique electronic and structural properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1084 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.219 | eV/atom | — |