Rb1 As1 O3

semiconductor

· Rb1 As1 O3

RbAsO₃ is an inorganic semiconductor compound composed of rubidium, arsenic, and oxygen, belonging to the family of metal arsenate semiconductors. This material remains primarily in the research and development phase, with potential applications in optoelectronic devices, photocatalysis, and solid-state physics studies. While not yet established in mainstream industrial production, arsenate semiconductors are of interest to researchers exploring novel materials for UV-sensitive devices and photovoltaic applications, though synthetic difficulty and potential toxicity concerns related to arsenic content limit near-term commercial adoption compared to conventional oxide or sulfide semiconductors.

research semiconductorsoptoelectronic devicesphotocatalysissolid-state physicsUV-sensitive applicationsexperimental materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.05190	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.147	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Rb1 As1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control