PtWON2 is an experimental ternary compound semiconductor composed of platinum, tungsten, oxygen, and nitrogen elements. This material belongs to the emerging class of mixed-anion semiconductors and is primarily investigated in research settings for its potential in photocatalysis, energy conversion, and optoelectronic applications. The combination of platinum and tungsten oxides with nitrogen doping offers the possibility of tuned bandgap and enhanced catalytic activity compared to single-component oxide semiconductors, making it of interest for next-generation water splitting, pollutant degradation, and solar energy harvesting technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.700 | eV | — | ||
Magnetic Moment(μB) | 1.706e-7 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.6000 | eV/atom | — |