Pr₈Si₄Te₄O₁₆ is an oxychalcogenide semiconductor compound combining praseodymium, silicon, tellurium, and oxygen—a rare-earth hybrid material that bridges traditional oxide and chalcogenide semiconductor families. This is largely a research-phase compound studied for its potential in photonic and electronic applications where rare-earth dopants can provide luminescence, magnetic, or specialized optical properties. The material represents an emerging class of mixed-anion semiconductors that could enable new device architectures in specialized optoelectronics or quantum technologies, though industrial deployment remains limited and primarily driven by academic exploration of structure–property relationships.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 111.4 | GPa | — | ||
Shear Modulus(G) | 54.03 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.146 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.057 | eV/atom | — |