Pr8S8O4 is a rare-earth oxyselenide/oxysulfide semiconductor compound containing praseodymium, likely in the form of a mixed-anion or layered crystal structure. This material belongs to the family of rare-earth chalcogenides and oxychalcogenides, which are primarily of research interest for optoelectronic and photovoltaic applications rather than established commercial use. The incorporation of both oxygen and sulfur/selenium anions creates tunable band gaps and electronic properties that make this compound a candidate material for next-generation semiconductors, though it remains largely in the development phase.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.348 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.745 | eV/atom | — |