Pr6Si4S16I2 is a rare-earth mixed-anion semiconductor compound combining praseodymium, silicon, sulfur, and iodine. This is an exploratory research material belonging to the family of rare-earth chalcohalide semiconductors, which are being investigated for their tunable band gaps and potential photonic or solid-state applications. The combination of rare-earth elements with both chalcogenide (sulfur) and halide (iodine) anions creates a structured framework that researchers are studying for emerging optoelectronic, photovoltaic, or radiation-detection applications where conventional semiconductors may have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.611 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.575 | eV/atom | — |