Pr₂Zn₂Bi₄O₁₂ is an ternary oxide semiconductor compound combining rare-earth (praseodymium), transition metal (zinc), and post-transition metal (bismuth) elements in a mixed-valence structure. This is a research-phase material primarily explored for photocatalytic and optoelectronic applications where layered oxide semiconductors offer tunable bandgaps and potential for visible-light activation. While not yet in mainstream industrial production, compounds in this material family are investigated as alternatives to conventional metal oxides in environmental remediation and energy conversion, valued for their ability to engineer electronic properties through composition control.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02750 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.830 | eV/atom | — |