Pr2 Cu2 S2 O2
semiconductorPr₂Cu₂S₂O₂ is an oxysulfide semiconductor compound combining praseodymium (a rare-earth element), copper, sulfur, and oxygen into a mixed-anion crystal structure. This material remains largely in the research phase, investigated primarily for its potential in photovoltaic devices, photoelectrochemistry, and optoelectronic applications where mixed-anion semiconductors offer tunable band gaps and enhanced light absorption compared to single-anion alternatives. The inclusion of copper and rare-earth elements positions it within the broader family of advanced semiconductors being explored to overcome efficiency and cost limitations of conventional silicon-based photovoltaics, though industrial adoption has not yet been established.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 91.43 | GPa | — | ||
Shear Modulus(G) | 41.48 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.856 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.106 | eV/atom | — |