Pr(InS2)3 is a ternary semiconductor compound combining praseodymium with indium sulfide, belonging to the rare-earth metal chalcogenide family. This is primarily a research material explored for its potential optoelectronic and photonic properties; industrial applications remain limited, but the material family shows promise in photodetectors, light-emitting devices, and advanced semiconductor applications where rare-earth doping provides tunable electronic and optical characteristics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.140 | eV | — |