PdTaO2N

semiconductor

· PdTaO2N

PdTaO2N is an experimental oxynitride semiconductor combining palladium, tantalum, oxygen, and nitrogen phases. This material belongs to the mixed-anion semiconductor family and is primarily investigated in research settings for photocatalytic and optoelectronic applications where narrow bandgap semiconductors with tunable electronic structure are needed. The incorporation of both oxygen and nitrogen anions allows fine-tuning of electronic properties compared to conventional oxides or nitrides alone, making it a candidate for visible-light-driven photocatalysis, water splitting, and potentially advanced photoelectrochemical devices.

photocatalytic water treatmentphotoelectrochemical hydrogen productionvisible-light photocatalysisresearch semiconductorsenvironmental remediation devicessolar energy conversion

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	—
Magnetic Moment(μB)	-0.0000965	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

PdTaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control