PdNbO2N

semiconductor

· PdNbO2N

PdNbO2N is an experimental oxynitride semiconductor compound combining palladium, niobium, oxygen, and nitrogen. This material belongs to the family of transition metal oxynitrides, which are of interest in photocatalysis and electrochemistry research due to their tunable band gaps and enhanced stability compared to pure oxides or nitrides. While not yet commercialized, PdNbO2N is investigated primarily for environmental remediation and energy conversion applications where its mixed-anion composition may offer improved light absorption and charge carrier dynamics.

photocatalytic water splittingpollutant degradationphotoelectrochemical devicesenvironmental remediation catalyststhin-film semiconductorsresearch/development phase

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	—
Magnetic Moment(μB)	-0.00000207	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

PdNbO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control