Pd₁N₁ is a palladium nitride semiconductor compound, likely in early research or development stages. This intermetallic nitride belongs to a family of transition metal nitrides being investigated for advanced electronic and photonic applications where the combination of metallic and ceramic properties offers potential advantages. The material is notable for research contexts exploring wide-bandgap semiconductors and catalytic applications, though industrial adoption remains limited compared to established semiconductor platforms.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 176.2 | GPa | — | ||
Shear Modulus(G) | 5.460 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01860 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.002 | eV/atom | — |