PbGaN3 — Properties & Data | MatWorld

PbGaN3

ceramic

· PbGaN3

PbGaN3 is an experimental lead-gallium nitride ceramic compound that combines lead oxide with gallium nitride phases. This material is primarily of research interest for advanced semiconductor and optoelectronic applications, particularly where wide bandgap properties and high-temperature stability of gallium nitride can be enhanced or modified by lead incorporation. While not yet established in high-volume industrial production, materials in the PbGaN family are being investigated for specialized RF power devices, high-temperature electronics, and potentially novel photonic applications where conventional GaN alone may have limitations.

Wide-bandgap semiconductor researchHigh-temperature electronic devicesRF power applicationsExperimental photonicsAdvanced ceramic composites

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	4.000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.620	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

PbGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental