Pb2BiS2I3 is a lead-bismuth mixed halide-chalcogenide semiconductor compound that combines heavy metal cations with iodide and sulfide anions. This is a research-phase material being investigated for optoelectronic and photovoltaic applications, particularly as an alternative to lead-halide perovskites, leveraging bismuth as a less toxic heavy metal while maintaining semiconducting properties suitable for light absorption and charge transport.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.600 | eV | — |