Pb1Se0.95S0.05
semiconductorPb1Se0.95S0.05 is a narrow-bandgap lead chalcogenide semiconductor formed by partial substitution of sulfur into lead selenide (PbSe). This is an engineered compound within the IV-VI semiconductor family, designed to fine-tune the electronic and optical properties of the parent PbSe material through controlled alloying. Lead chalcogenides including this composition are primarily used in infrared detection and thermal imaging systems, where the tuned bandgap enables sensitivity in specific infrared wavelength windows. This material is notable for applications requiring mid- to long-wavelength infrared detection at cryogenic or thermoelectrically cooled temperatures, offering an alternative to more expensive III-V detectors when cost and manufacturability are constraints.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |