Pb₀.₉Sn₀.₁Se is a lead-tin selenide alloy, a narrow-bandgap semiconductor compound belonging to the IV-VI semiconducting family. This material is primarily investigated for infrared (IR) detection and thermal imaging applications, where its tunable bandgap and narrow band structure enable sensitivity across mid- to long-wavelength infrared regions. Compared to pure lead selenide, the tin doping modifies the electronic structure and thermal properties, making it relevant for high-performance IR detectors, thermal sensors, and potential thermoelectric energy conversion devices operating at cryogenic to moderate temperatures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.08000 | eV | — |