Pb0.99Ge0.01Se
semiconductor· Pb0.99Ge0.01Se
Pb0.99Ge0.01Se is a lead selenide (PbSe) semiconductor with minor germanium doping, belonging to the IV–VI narrow-bandgap semiconductor family. This material is primarily investigated for infrared detection and thermal imaging applications, where its narrow bandgap enables sensitivity in the mid- to long-wave infrared spectrum. Lead selenide compounds are valued in defense, medical thermography, and night-vision systems because they outperform silicon and III–V semiconductors in the 2–15 μm range, though the germanium alloying fraction here is experimental and likely used to fine-tune bandgap or carrier properties for specific detector performance.
infrared photodetectorsthermal imaging sensorsnight-vision systemsmid-wave IR detectionbandgap engineering research
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.