Pb0.999Se0.999Bi0.002Te0.003

semiconductor

· Pb0.999Se0.999Bi0.002Te0.003

This is a lead selenide (PbSe)-based compound heavily doped with small amounts of bismuth and tellurium, representing a quaternary semiconductor alloy within the IV-VI semiconductor family. PbSe and related lead chalcogenides are narrow-bandgap materials primarily investigated for infrared detection, thermal energy conversion, and mid-wave infrared sensing applications where their tunable bandgap and carrier properties are advantageous. The bismuth and tellurium doping modifies electronic band structure and carrier concentration, making this a research-oriented composition rather than a commercial standard—such variants are explored in thermoelectric devices (waste heat recovery), infrared detectors, and advanced thermal imaging systems where engineered doping can improve figure of merit or detectivity compared to undoped lead selenide.

Infrared detectors (MWIR)Thermoelectric energy conversionThermal imaging sensorsLead chalcogenide research alloysBandgap engineering for optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.999Se0.999Bi0.002Te0.003

Electrical Properties

Regulatory Screening

Environmental

Export Control