Pb0.96TeIn0.04

semiconductor

· Pb0.96TeIn0.04

Pb0.96TeIn0.04 is a lead telluride (PbTe)-based semiconductor alloy doped with indium, belonging to the IV-VI narrow-bandgap semiconductor family. This material is primarily investigated for thermoelectric applications where it can convert waste heat into electrical power, and is notable for its potential in infrared detection and sensing at cryogenic temperatures; indium doping modifies the carrier concentration and band structure to optimize thermoelectric figure of merit or detection sensitivity compared to undoped PbTe.

thermoelectric power generationinfrared detectorscryogenic sensingwaste heat recoveryresearch/prototype phase

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3700	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.96TeIn0.04

Electrical Properties

Regulatory Screening

Environmental

Export Control