Pb0.93TeIn0.07

semiconductor

· Pb0.93TeIn0.07

Pb0.93TeIn0.07 is a lead telluride-based semiconductor alloy doped with indium, belonging to the IV-VI narrow-bandgap semiconductor family. This material is primarily researched for thermoelectric applications where the indium doping modifies carrier concentration and bandgap to improve energy conversion efficiency in solid-state heat-to-electricity devices. Lead telluride compounds are established in high-temperature thermoelectric generators and cooling systems, with indium-doped variants investigated to optimize performance in mid-temperature ranges typical of waste-heat recovery and space power applications.

Thermoelectric power generationWaste heat recoverySpace-based thermal systemsMid-temperature energy conversionSemiconductor research and developmentDoped IV-VI compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3200	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.93TeIn0.07

Electrical Properties

Regulatory Screening

Environmental

Export Control