Pb0.87Sn0.13Se

semiconductor

· Pb0.87Sn0.13Se

Pb0.87Sn0.13Se is a narrow-bandgap IV-VI semiconductor alloy combining lead selenide with tin, engineered to tune electronic and optical properties for infrared detection and thermal imaging applications. This material belongs to the lead chalcogenide family and is primarily used in specialized optoelectronic devices where sensitivity to mid- and long-wavelength infrared radiation is required; it offers improved thermal stability and bandgap tunability compared to pure PbSe, making it valuable for demanding sensing environments in defense, thermal monitoring, and scientific instrumentation.

infrared detectorsthermal imaging sensorsmid-wavelength IR applicationslead chalcogenide semiconductorsoptoelectronic devicescryogenic thermal sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.87Sn0.13Se

Electrical Properties

Regulatory Screening

Environmental

Export Control