Pb0.87Sn0.13Se
semiconductor· Pb0.87Sn0.13Se
Pb0.87Sn0.13Se is a narrow-bandgap IV-VI semiconductor alloy combining lead selenide with tin, engineered to tune electronic and optical properties for infrared detection and thermal imaging applications. This material belongs to the lead chalcogenide family and is primarily used in specialized optoelectronic devices where sensitivity to mid- and long-wavelength infrared radiation is required; it offers improved thermal stability and bandgap tunability compared to pure PbSe, making it valuable for demanding sensing environments in defense, thermal monitoring, and scientific instrumentation.
infrared detectorsthermal imaging sensorsmid-wavelength IR applicationslead chalcogenide semiconductorsoptoelectronic devicescryogenic thermal sensing
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.