Pb0.61Ge0.39Te

semiconductor

· Pb0.61Ge0.39Te

Pb₀.₆₁Ge₀.₃₉Te is a lead-germanium telluride alloy, a narrow-bandgap semiconductor belonging to the IV-VI narrow-gap semiconductor family. This ternary compound is engineered for infrared detection and thermal imaging applications where sensitivity in the mid- to long-wave infrared (MWIR/LWIR) spectrum is critical. The specific Pb/Ge ratio in this composition balances bandgap energy and thermal stability, making it attractive for high-performance infrared detectors, though it remains primarily a research and specialized industrial material rather than a commodity semiconductor.

infrared detectorsthermal imaging sensorsMWIR/LWIR photodetectorscryogenic radiation detectionresearch semiconductor compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.61Ge0.39Te

Electrical Properties

Regulatory Screening

Environmental

Export Control