Pa3Zn1 is a compound semiconductor composed of phosphorus and zinc in a 3:1 stoichiometric ratio, belonging to the III-V semiconductor family. This material is primarily of research and development interest for optoelectronic and high-frequency electronic applications, where phosphides offer potential advantages in band gap engineering and carrier mobility compared to more established III-V compounds. While not widely commercialized in high-volume production, phosphide-based semiconductors are investigated for specialized niche applications requiring specific electrical or optical properties unavailable in conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000600 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.05000 | eV/atom | — |