P4Ni2Ba1 is an experimental intermetallic semiconductor compound combining nickel and barium with phosphorus, representing research into ternary phosphide systems for potential electronic and photonic applications. This material family is primarily of academic and developmental interest rather than established industrial production, with investigation focused on understanding electronic band structure, thermal properties, and potential device functionality in emerging semiconductor technologies. The compound's stiffness characteristics suggest potential applications in structural semiconductors where mechanical stability at operating conditions is critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 97.12 | GPa | — | ||
Shear Modulus(G) | 35.45 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00300 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6820 | eV/atom | — |