P₂Se₅ is a binary phosphorus selenide semiconductor compound belonging to the phosphorus chalcogenide family, which exhibits layered crystal structures amenable to mechanical exfoliation. This material is primarily investigated in research contexts for optoelectronic and photonic applications, where its semiconducting bandgap and two-dimensional form-factor offer potential advantages in field-effect transistors, photodetectors, and integrated photonics compared to conventional silicon or III-V semiconductors. The layered nature and moderate exfoliation characteristics make it a candidate for van der Waals heterostructure engineering in emerging quantum and nanoscale device platforms.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Exfoliation Energy(Eexf) | 122.5 | meV/atom | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.030 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 2.200 | eV | Measured | ||
| ↳ | 1.049 | eV | DFT · OptB88vdW | ||
| ↳ | 1.719 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 13.24 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 9.966 | - | DFT · OptB88vdW | ||
| ↳ | 7.638 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000608 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000637 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -323.7 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 312.2 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 28.90 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.03690 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.01123 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data