P1 Zr2Te2 is an experimental semiconductor compound in the zirconium telluride family, representing a layered or mixed-valence system with potential for electronic and photonic applications. While not yet widely commercialized, zirconium telluride materials are of research interest for thermoelectric devices, topological properties, and high-temperature electronics due to the chemical stability and electronic characteristics of zirconium combined with tellurium's tunable band gap behavior. Engineers would consider this class of material for next-generation energy conversion or quantum device research where conventional semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 47.86 | GPa | — | ||
Shear Modulus(G) | 31.75 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02730 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.159 | eV/atom | — |