P1 In1

semiconductor

· P1 In1

P1 In1 is an indium-based semiconductor compound, likely referring to indium phosphide (InP) or a similar III-V direct bandgap semiconductor. This material is widely used in high-frequency optoelectronic and photonic applications where direct bandgap properties and high electron mobility are critical for device performance. Its selection over alternatives like GaAs or silicon is driven by superior efficiency in infrared and millimeter-wave applications, making it essential for next-generation communication and sensing technologies.

high-speed integrated circuitsfiber-optic communicationsmillimeter-wave devicesinfrared photodetectorssolar cells and photovoltaicsheterojunction transistors (HBT/HEMT)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	59.70	GPa	—
Shear Modulus(G)	32.04	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8864	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2240	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

P1 In1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control