P1 Ge1 is a germanium-based semiconductor compound, likely representing a phosphorus-germanium binary or ternary system in early-stage research or development context. This material belongs to the IV-IV or III-V semiconductor family and is of interest for specialized electronic and optoelectronic applications where germanium's narrow bandgap and high carrier mobility offer advantages over silicon. The material would be evaluated for high-speed electronics, infrared detection, or next-generation photonic devices where thermal stability and carrier transport properties are critical design factors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 74.40 | GPa | — | ||
Shear Modulus(G) | 51.88 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01400 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.2660 | eV/atom | — |