P1 Er1 is a semiconductor material based on erbium (Er), likely an erbium-doped compound or erbium-containing intermetallic phase. While specific composition details are not provided, erbium semiconductors are primarily investigated for optoelectronic and photonic applications, particularly in fiber-optic telecommunications where erbium's emission wavelength aligns with the C-band (1530–1565 nm) used in long-distance signal transmission. This material class is notable for enabling integrated photonics and laser systems where wavelength selectivity and signal amplification are critical, making it valuable in research contexts for next-generation optical communication infrastructure and specialty photonic devices.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 92.17 | GPa | — | ||
Shear Modulus(G) | 68.14 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1350 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.711 | eV/atom | — |