OsGeO2N is an experimental ceramic compound combining osmium, germanium, oxygen, and nitrogen elements, representing a research-phase material in the family of complex oxide-nitride ceramics. This material class is being investigated for high-temperature structural applications and advanced electronic/photonic devices where the combination of refractory metals (osmium) and germanium offers potential for extreme thermal stability or unique electrical properties. As a laboratory compound, OsGeO2N remains primarily in materials research rather than established industrial production, but the oxide-nitride ceramic platform shows promise for next-generation applications requiring exceptional hardness, chemical inertness, or specialized semiconductor behavior.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.9342 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.340 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data