OsGaO2N is an experimental ternary ceramic compound containing osmium, gallium, oxygen, and nitrogen. This material belongs to the family of metal oxynitride ceramics, which are research-phase compounds designed to combine the thermal stability and hardness of oxides with the enhanced properties (such as improved electronic conductivity or mechanical strength) that nitrogen incorporation can provide. While not yet commercially established, oxynitride ceramics like this are being investigated for high-temperature structural applications, advanced electronic devices, and potentially as catalytic materials, where the unique bonding environment created by mixed anion chemistry could offer advantages over conventional oxide or nitride alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -1.110 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.420 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data