O9 Nb2 Pb1 Bi2

semiconductor

· O9 Nb2 Pb1 Bi2

O9 Nb2 Pb1 Bi2 is an experimental oxide-based semiconductor compound combining niobium, lead, and bismuth in a quaternary oxide system. This material belongs to the family of complex metal oxides under investigation for thermoelectric and photovoltaic applications, where the combination of heavy elements (Pb, Bi) with refractory metal oxides (Nb) is designed to engineer band gaps and carrier mobility. Research on such compounds targets energy conversion and solid-state electronic devices where conventional semiconductors face thermal or environmental limitations.

thermoelectric energy conversionphotovoltaic researchsolid-state electronicsexperimental semiconductorshigh-temperature device materialsoxide electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.296	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.078	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O9 Nb2 Pb1 Bi2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control