O8 W2 Zn2 is an experimental ternary oxide compound containing tungsten and zinc in a mixed-valence oxide matrix, belonging to the family of tungsten-zinc oxide semiconductors. This material is primarily of research interest for optoelectronic and photocatalytic applications, where the tungsten-zinc oxide system offers potential advantages in band gap engineering and charge carrier mobility compared to single-component oxides. The compound's notable characteristics within this material family include mixed-metal coordination that can enable tunable electronic properties, making it relevant for emerging device technologies where conventional binary semiconductors have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6055 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.048 | eV/atom | — |