O8V2Bi2 is an experimental bismuth-containing oxide compound, likely belonging to the vanadium oxide semiconductor family with potential applications in advanced electronic and photonic devices. This material is primarily of research interest for investigating novel defect structures, band gap engineering, or mixed-valence electron behavior in complex oxides. While not yet established in mainstream industrial production, materials in this compositional space are explored for next-generation energy conversion, sensing, or catalytic applications where bismuth's electronic properties and vanadium's redox chemistry can be leveraged.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.176 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.133 | eV/atom | — |