O8Sr2Bi4 is a bismuth-based mixed-metal oxide semiconductor compound containing strontium, belonging to the family of layered perovskite and Aurivillius-phase materials. This is primarily a research-stage compound investigated for its electronic and photocatalytic properties rather than a commercial engineering material. The material shows potential in photocatalysis, ferroelectric applications, and optoelectronic devices due to its layered crystal structure and tunable band gap, though it remains in early development phases compared to mature semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.479 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.871 | eV/atom | — |